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高阻氮化镓外延层的异常光吸收
Authors
刘宗顺
刘文宝
+5 more
张书明
朱建军
杨辉
江德生
赵德刚
Publication date
1 January 2010
Publisher
Abstract
通过光伏谱(PV)的测量发现,采用MOCVD方法生长的非故意掺杂GaN外延膜,电阻较大的样品在带隙内有明显的异常光吸收.吸收峰的能量位置表明这种异常吸收可能与激子有关.在这些高阻样品上制作的MSM型探测器,当入射光照射不同位置,其光谱响应显示了区域不一致性.20V偏压下反向偏置结处的光谱响应比正向偏置结处的光谱响应大一个数量级左右,峰值响应的位置也发生明显红移现象,红移的能量约为28meV,并且几乎不随环境温度变化.根据MSM结构的电场分布不均以及带边和激子响应对电场的依赖性不同,MSM型探测器的这种区域响应不一致性可以得到很好的解
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Last time updated on 17/10/2017