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退火温度对ZnS/PS薄膜的晶体结构和光电性质的影响
Authors
李清山
梁德春
王彩凤
胡波
Publication date
1 January 2010
Publisher
Abstract
用脉冲激光沉积法(PLD)在多孔硅(PS)衬底上生长ZnS薄膜,分别在300℃,400℃和500℃下真空退火.用X射线衍射(XRD)和扫描电子显微镜(SEM)研究了退火对ZnS薄膜的晶体结构和表面形貌的影响,并测量了ZnS/PS复合体系的光致发光(PL)谱和异质结的I-V特性曲线.研究表明,ZnS薄膜仅在28.5°附近存在着(111)方向的高度取向生长,由此判断薄膜是单晶立方结构的-βZnS.随着退火温度的升高,-βZnS的(111)衍射峰强度逐渐增大,且ZnS薄膜表面变得更加均匀致密,说明高温退火可以有效地促进晶粒的结合并改善结晶质量.ZnS/PS复合体系的PL谱中,随着退火温度升高,ZnS薄膜的自激活发光强度增大,而PS的发光强度减小,说明退火处理更有利于ZnS薄膜的发光.根据三基色叠加的原理,ZnS的蓝,绿光与PS的红光相叠加,ZnS/PS体系可以发射出较强的白光.但过高的退火温度会影响整个ZnS/PS体系的白光发射.ZnS/PS异质结的I-V特性曲线呈现出整流特性,且随着退火温度的升高其正向电流增
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Last time updated on 17/10/2017