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GaAs/Si/AlAs异质结的带阶和GaAS生长温度的影响
Authors
吴正龙
周大勇
+7 more
孔云川
李永平
杨锡震
澜清
牛智川
王亚非
田强
Publication date
1 January 2003
Publisher
Abstract
用分子束外延(MBE)设备制备了GaAs/AlAs和GaAs/Si/AlAs异质结,通过XPS分别研究了异质结界面处Si层厚度为0.5ML和1ML对异质结带阶的调节,得到最大调节量为0.2eV;通过C-V法研究了异质结的GaAs层在不同温度下生长对0.5MLSi夹层的影响,得到Si夹层的空间分布随GaAs层生长温度的升高而扩散增强的温度效应,通过深能级瞬态谱(DLTLS)研究了在上述不同温度下生长的GaAs层的晶体质量
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Last time updated on 29/11/2016