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RF-MBE生长AlN/GaN超晶格结构二维电子气材料
Authors
刘宏新
刘成海
+7 more
孙殿照
曾一平
李晋闽
林兰英
王军喜
王晓亮
胡国新
Publication date
1 January 2003
Publisher
Abstract
用射频等离子体辅助分子束外延技术(RF-MBE)在c面蓝宝石衬底上外延了高质量的GaN膜以及AlN/GaN超晶格结构极化感应二维电子气材料。所获得的掺Si的GaN膜室温电子浓度为2.2 * 10~(18)cm~(-3),相应的电子迁移率为221cm~2/(V·s);1μm厚的GaN外延膜的(0002)X射线衍射摇摆曲线半高宽(FWHM)为7’;极化感应产生的二维电子气室温电子迁移率达到1086cm~2/(V·s),相应的二维电子气面密度为7.5 * 10~(12)cm~(-2)
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Last time updated on 29/11/2016