A new design of the avalanche photodiodes with an array of micro-pixel p-n-junctions was developed on base of metal-oxide-silicon
structure. The thermal oxide layer of 1000A thickness contains tunnel oxide regions with about 25A thickness. The device exhibits a noise
factor ~ 4 at a high multiplication factor (M~10000). A high space uniformity of sensitivity was found for gain of M~ 1000

Alekperov, O.

Jafarov, E.

Madatov, R.

Musaev, M.

Sadygov, Z.

Safarov, N.

Suleimanov, M.

English

Khazar University Institutional Repository

See discussions, stats, and author profiles for this publication at: https://www.researchgate.net/publication/237496809A NEW LOW-NOISE AVALANCHE PHOTODIODE WITH MICRO-PIXELSTRUCTUREArticleCITATIONS0READS236 authors, including:Some of the authors of this publication are also working on these related projects:onset of turbulence, multiverse theories View projectDevelopment of compact radiation detectors View projectZiraddin Zair SadygovJoint Institute for Nuclear Research, Dubna, Russia70 PUBLICATIONS   448 CITATIONS   SEE PROFILEAll content following this page was uploaded by Ziraddin Zair Sadygov on 09 December 2015.The user has requested enhancement of the downloaded file.ФИЗИКА                                                            2004                                                      ЖИЛД X №4  A NEW LOW-NOISE AVALANCHE PHOTODIODE WITH MICRO-PIXEL STRUCTURE  O. ALEKPEROV, E. JAFAROV, Z. SADYGOV, N. SAFAROV, M. SULEIMANOV Institute of Physics, Azerbaijan National Academy of Sciences R. MADATOV Azerbaijan State Oil Academy M. MUSAEV Institute of Radiation Problems, Azerbaijan National Academy of Sciences  A new design of the avalanche photodiodes with an array of micro-pixel p-n-junctions was developed on base of metal-oxide-silicon structure. The thermal oxide layer of 1000A thickness contains tunnel oxide regions with about 25A thickness. The device exhibits a noise factor ~ 4 at a high multiplication factor (M~10000).  A high space uniformity of sensitivity was found for gain of M~ 1000.   INTRODUCTION The use of the metal–insulator–silicon (MIS) structure as an avalanche photodiode was first proposed in [1, 2]. The traditional MIS-structures exhibited very high gains in comparison with ordinary avalanche photodiodes (APD). However, the mentioned avalanche MIS-structures need pulsed bias for operation because of a thick oxide layer.  This disadvantage was avoided by using wide-gap resistive layers instead of the insulator (see [3–6]). In this case, carriers accumulated during avalanche process at interface silicon-resistive layer flow out through the high-resistive layer.  A major disadvantage of such structures is the poor reproducibility of wide-gap layer. In this study, we examine the characteristics of an avalanche photosensitive MIS structure, where carriers flow out from the avalanche regions to upper electrodes throw specially created pixels with tunnel oxide layer of ~25A thickness.  DEVICE DESIGN AND OPERATION The device is intermediate between conventional avalanche photodiodes and photosensitive MIS structures intended for avalanche mode operation. This planar photodiode was made on p-Si wafer with a specific resistance about 1Ω*см. The photosensitive area is covered with a silicon oxide (SiO2) layer of ~1000A and a semitransparent titanium coating connected to a collector electrode of thick aluminium ring (Fig.1.). The silicon oxide layer separates metal electrodes from a substrate. On a surface of silicon substrate a matrix of p-n-junctions was manufactured. Above the p-n-junctions a thin oxide of  ~25A was made.  The sizes of p-n-junctions were 2µ*2µ, and interval between them – 6µ. The amplification of photocurrent is yielded only in these p-n-junctions. Then the avalanche current flows out to contacts by tunnelling process throw thin oxide layer. This enables the MIS structure to operate in the avalanche mode at a continuous bias mode.   EXPERIMENTAL DATA We studied photodiode noise properties using a conventional technique for low-signal radio engineering; i.e., a dc signal was measured after square-law detection of noise, which made it possible to restrict our measurements to a relatively narrow frequency range (3 MHz in the considered case).  Fig. 1. Cross section of the avalanche MIS- photodiode;             1 - p-Si substrate,  2 - p-n-junction,  3 - thin oxide             layer,  4- thick oxide layer,  5- semitransparent Ti             layer,  6- thick Al layer.   Fig. 2. Excess noise factor F versus the signal gain M.  Figure 2 displays the measured noise factor for the tested diode. The noise factor was measured using light emitting diode with λ∼0.55µ, which is absorbed mostly in near- surface region. In this case, holes are injected into the diode active region, which is extremely adverse to the signal-to-noise ratio, as is evident from the data acquired at relatively low M. The avalanche MIS photodiode exhibited substantially better noise characteristics because of local negative feedback effect. It is necessary to note, that the noise factor measured at the highest M are lower than those calculated according to the McIntyre theory [7] for electron injection and for very small k = 0.005.  GAIN DISTRIBUTION OVER THE  PHOTOSENSITIVE AREA One of disadvantages of APD’s with traditional design is its non-uniform photosensitivity over the working area, which becomes more pronounced with increasing multiplication factor. A negative feedback mechanism in MIS avalanche photodiodes substantially levels off this problem.  O. ALEKPEROV, E. JAFAROV, Z. SADYGOV, N. SAFAROV, M. SULEIMANOV, R. MADATOV, M. MUSAEV   80 Fig.3. Coordinate dependence of photosensitivity at M~1000.  Figure 3 displays the measured coordinate dependence of photosensitivity at M~1000. The measurements were carried out using an optical probe with a diameter of 30µ. The non-uniformity found in the sensitivity over the area does not exceed 20%. The appreciable photo- sensitivity beyond the receiving area edge is caused by scattered radiation in the optical system.  CONCLUSION  A new type of avalanche photodiode high gain was developed on base of MIS technology.  The micro-pixel avalanche photodiode demonstrates very low noise factor at signal gains more than 102. Further studies will be focused on increasing of signal gain up to 106.   This work was supported in part by CRDF US-Azerbaijan Bilateral Grant #3106.   [1] N. I. Gol’braikh, A. F. Plotnikov, and V.E. Shubin, Kvantovaya Elektron. (Russia) 1975,2, 2624 [2] S. V. Bogdanov, A. B. Kravchenko, A. F. Plotnikov, and V. E. Shubin, Phys. Status Solidi 1986,A 93, 361  [3] G. Gasanov, V. M. Golovin, Z. Ya. Sadygov, and  N. Yu. Yusipov. Sov. Tech. Phys. Lett. 1988,14, 313  [4] Z. Ya. Sadygov, Russian Patent # 2086047 (1996). [5] Z. Ya. Sadygov, M. K. Suleimanov, and T. Yu. Bokova. Pis’ma Zh. Tekh. Fiz. 2000,26 (7), 75 or Tech. Phys. Lett. 2000,26, 305 [6] Z. Ya. Sadygov, V. N. Jejer, Yu. V. Musienko, T. V. Sereda, A. V. Stoikov, I. M. Zheleznykh.  Nucl. Instrum. and Methods in Phys. Res., 2003,A504 , 301-303. [7] R. McIntyre  IEEE Trans. Electron Devices ED-13 (1), 164 (1966).  O. ßëÿêáÿðîâ, E. Úÿôÿðîâ, Ð. Ìÿäÿòîâ, Ì. Ìóñàéåâ, Ç. Ñàäûãîâ, Í. Ñÿôÿðîâ, Ì. Ñöëåéìàíîâ  ÉÅÍÈ ÌÈÊÐÎ-ÏÈÊÑÅË ÑÒÐÓÊÒÓÐÀ ÌÀËÈÊ ÀØÀÜÛ ÊÖÉËÖ ÑÅËÂÀÐÈ ÔÎÒÎÄÈÎÄËÀÐ  Ìåòàë-Îêñèä-Ñèëèñèóì ñòðóêòóðó ÿñàñûíäà ìèêðî-ïèêñåë ï-í-êå÷èäëÿð ìàññèâèíÿ ìàëèê ñåëâàðè ôîòîäèîëàðûí éåíè ôîðìàñû èøëÿíèá ùàçûðëàíìûøäûð. 1000 À ãàëûíëûüûíäàêû îêñèä ëàéû òÿãðèáÿí 25 À ãàëûíëûüûíäà òóíåë îêñèä áþëöìëÿðèíè îçöíäÿ ñàõëàéûð. Éöêñÿê ýöúëÿíäèðìÿ ôàêòîðó àëòûíäà (M~10000) ãóðüóíóí êöé ôàêòîðó òÿãðèáÿí 4-ÿ áÿðàáÿðäèð. M~1000 ýöúëÿíìÿñè çàìàíû èñÿ ùÿññàñëûüûí ÿí éöêñÿê ôÿçà áèðúèíñëèéèíÿ ìàëèê îëìàñû àøêàðëàíìûøäûð.   O. Алекперов, E. Джафаров, Р. Мадатов, М. Мусаев, З. Садыгов, Н. Сафаров, М. Сулейманов  НОВЫЙ НИЗКОШУМНЫЙ ФОТОДИОД С МИКРО-ПИКСЕЛЬНОЙ СТРУКТУРОЙ  Новый шаблон лавинных фотодиодов с массивом микро-пиксельных p-n-переходов был разработан на основе Металл-Оксид-Кремний структуры. Термальный оксидный слой толщины 1000А содержит туннельные оксидные регионы толщины около 25А. Устройство демонстрирует фактор шума ~4 при факторе высокого умножения (M~10000). При увеличении фактора M~1000 найдено высокое пространственное однообразие чувствительности.   View publication stats

A New Low-Noise Avalanche Photodiode With Micro-Pixel Structure

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A New Low-Noise Avalanche Photodiode With Micro-Pixel Structure

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