We report on the nanosheet-thickness effects on the performance of top-gate MoS2 field-effect transistors (FETs), which is directly related to the MoS2 dielectric constant. Our top-gate nanosheet FETs with 40 nm thin Al2O3 displayed at least an order of magnitude higher mobility than those of bottom-gate nanosheet FETs with 285 nm thick SiO2, benefiting from the dielectric screening by high-k Al2O3. Among the top-gate devices, the single-layered FET demonstrated the highest mobility of similar to 170 cm(2) V-1 s(-1) with 90 mV dec(-1) as the smallest subthreshold swing (SS) but the double-and triple-layered FETs showed only similar to 25 and similar to 15 cm(2) V-1 s(-1) respectively with the large SS of 0.5 and 1.1 V dec(-1). Such property degradation with MoS2 thickness is attributed to its dielectric constant increase, which could rather reduce the benefits from the top-gate high-k dielectric.open115353Nsciescopu
