van Schaijk, R.T.F.

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UvA-DARE is a service provided by the library of the University of Amsterdam (https://dare.uva.nl)UvA-DARE (Digital Academic Repository)Magnetotransport of low dimensional semiconductor and graphite basedsystemsvan Schaijk, R.T.F.Publication date1999Link to publicationCitation for published version (APA):van Schaijk, R. T. F. (1999). Magnetotransport of low dimensional semiconductor andgraphite based systems. Universiteit van Amsterdam.General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s)and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an opencontent license (like Creative Commons).Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, pleaselet the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the materialinaccessible and/or remove it from the website. Please Ask the Library: https://uba.uva.nl/en/contact, or a letterto: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. Youwill be contacted as soon as possible.Download date:26 Jul 2022Contents 1. General Introduction 7 1.1. Introduction 7 1.2. Outline of this thesis. 9 1.3. Low dimensional systems 11 1.3.1. Graphite based materials 11 1.3.1.1. Graphite intercalation compounds 11 1.3.1.2. Graphite foils 12 1.3.2. Low-dimensional semiconductor structures 12 1.3.2.1. InGaAs heterostructure 13 1.3.2.2. 5-doped materials 14 2. Magnetotransport properties 17 2.1. Classical magnetoresistance 17 2.2. Weak localisation 18 2.3. Strong localisation 19 2.4. Shubnikov-deHaas effect 23 2.5. Quantum Hall effect 25 3. Bandstructure of PdAl2Cl8 graphite intercalation compounds 29 3.1. The graphite intercalation compound: a carbon-based material 29 3.2. Synthesis of PdAl2Cl8 GIC and experimental methods 32 3.3. Band structure model of acceptor-type graphite intercalation compounds 32 3.3.1. First stage 33 3.3.2. Second stage 34 3.3.3. Third stage 35 3.4. Results 36 3.5. Angle dependent magnetoresistance 41 3.6. Conclusions 46 4. Magnetotransport in carbon foils fabricated from exfoliated graphite 49 4.1. Introduction 49 4.2. Experimental 50 4.2.1. Sample preparation 50 4.2.2. Measuring techniques 51 4.3. Results 52 4.3.1. Structural parameters 52 4.3.2. Hall effect 53 4.3.3. Resistivity and magnetoresistance 54 4.4. Analysis 56 4.4.1. Hall effect 56 4.4.2. Resistivity and magnetoresistance 57 4.5. Discussion 65 4.6. Conclusions 65 5. Scaling in the quantum Hall regime 69 5.1. Introduction 69 5.2. The concept of scaling in the quantum Hall regime 70 5.3. An overview of the experiments on scaling in the quantum Hall regime 75 5.4. Magnetic field induced metal-insulator transition: an overview 78 5.5. Universality of a*xx and pxx 80 5.6. Scaling of the quantum Hall plateau-to-insulator transition in InGaAs 82 5.6.1. Probing the quantum Hall plateau-to-insulator transition 82 5.6.2. Scaling of the conductivities 83 5.6.3. A different approach to the PI transition 86 5.6.4. Origin of the different exponents 89 5.7. Crossover from classical to quantum transport 93 5.8. Conclusions 96 6. Magnetotransport in GaAs ô-doped with tin 101 6.1. Introduction 101 6.2. GaAs 5-doped with tin on singular substrates 103 6.2.1. Samples on singular substrate: experimental 103 6.2.2. Selfconsistent calculation of the subband energies 103 6.2.3. Experiments in perpendicular magnetic field 107 6.2.4. Experiments in parallel magnetic field 113 6.3. GaAs 5-doped with tin on vicinal substrates 116 6.3.1. Introduction 116 6.3.2. Samples on vicinal substrate. 117 6.3.3. Experiments in perpendicular magnetic field. 118 6.3.4. Experiments in parallel magnetic field. 122 6.4. Illumination effects in GaAs (5-Sn). 124 6.4.1. Introduction 124 6.4.2. The DX centre. 126 6.4.3. Persistent photoconductivity results 128 6.4.4. Explanation of persistent photoconductivity. 132 6.5. Conclusions 137 Summary 143 Samenvatting 145 List of publications 149 Dankwoord 150 It is better to be roughly right, than precisely wrong Keynes 

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Magnetotransport of low dimensional semiconductor and graphite based systems

UvA-DARE

UvA-DARE is a service provided by the library of the University of Amsterdam (https://dare.uva.nl)UvA-DARE (Digital Academic Repository)Magnetotransport of low dimensional semiconductor and graphite basedsystemsvan Schaijk, R.T.F.Publication date1999Link to publicationCitation for published version (APA):van Schaijk, R. T. F. (1999). Magnetotransport of low dimensional semiconductor andgraphite based systems. [, Universiteit van Amsterdam]. Universiteit van Amsterdam.General rightsIt is not permitted to download or to forward/distribute the text or part of it without the consent of the author(s)and/or copyright holder(s), other than for strictly personal, individual use, unless the work is under an opencontent license (like Creative Commons).Disclaimer/Complaints regulationsIf you believe that digital publication of certain material infringes any of your rights or (privacy) interests, pleaselet the Library know, stating your reasons. In case of a legitimate complaint, the Library will make the materialinaccessible and/or remove it from the website. Please Ask the Library: https://uba.uva.nl/en/contact, or a letterto: Library of the University of Amsterdam, Secretariat, Singel 425, 1012 WP Amsterdam, The Netherlands. Youwill be contacted as soon as possible.Download date:10 Mar 2023Contents 1. General Introduction 7 1.1. Introduction 7 1.2. Outline of this thesis. 9 1.3. Low dimensional systems 11 1.3.1. Graphite based materials 11 1.3.1.1. Graphite intercalation compounds 11 1.3.1.2. Graphite foils 12 1.3.2. Low-dimensional semiconductor structures 12 1.3.2.1. InGaAs heterostructure 13 1.3.2.2. 5-doped materials 14 2. Magnetotransport properties 17 2.1. Classical magnetoresistance 17 2.2. Weak localisation 18 2.3. Strong localisation 19 2.4. Shubnikov-deHaas effect 23 2.5. Quantum Hall effect 25 3. Bandstructure of PdAl2Cl8 graphite intercalation compounds 29 3.1. The graphite intercalation compound: a carbon-based material 29 3.2. Synthesis of PdAl2Cl8 GIC and experimental methods 32 3.3. Band structure model of acceptor-type graphite intercalation compounds 32 3.3.1. First stage 33 3.3.2. Second stage 34 3.3.3. Third stage 35 3.4. Results 36 3.5. Angle dependent magnetoresistance 41 3.6. Conclusions 46 4. Magnetotransport in carbon foils fabricated from exfoliated graphite 49 4.1. Introduction 49 4.2. Experimental 50 4.2.1. Sample preparation 50 4.2.2. Measuring techniques 51 4.3. Results 52 4.3.1. Structural parameters 52 4.3.2. Hall effect 53 4.3.3. Resistivity and magnetoresistance 54 4.4. Analysis 56 4.4.1. Hall effect 56 4.4.2. Resistivity and magnetoresistance 57 4.5. Discussion 65 4.6. Conclusions 65 5. Scaling in the quantum Hall regime 69 5.1. Introduction 69 5.2. The concept of scaling in the quantum Hall regime 70 5.3. An overview of the experiments on scaling in the quantum Hall regime 75 5.4. Magnetic field induced metal-insulator transition: an overview 78 5.5. Universality of a*xx and pxx 80 5.6. Scaling of the quantum Hall plateau-to-insulator transition in InGaAs 82 5.6.1. Probing the quantum Hall plateau-to-insulator transition 82 5.6.2. Scaling of the conductivities 83 5.6.3. A different approach to the PI transition 86 5.6.4. Origin of the different exponents 89 5.7. Crossover from classical to quantum transport 93 5.8. Conclusions 96 6. Magnetotransport in GaAs ô-doped with tin 101 6.1. Introduction 101 6.2. GaAs 5-doped with tin on singular substrates 103 6.2.1. Samples on singular substrate: experimental 103 6.2.2. Selfconsistent calculation of the subband energies 103 6.2.3. Experiments in perpendicular magnetic field 107 6.2.4. Experiments in parallel magnetic field 113 6.3. GaAs 5-doped with tin on vicinal substrates 116 6.3.1. Introduction 116 6.3.2. Samples on vicinal substrate. 117 6.3.3. Experiments in perpendicular magnetic field. 118 6.3.4. Experiments in parallel magnetic field. 122 6.4. Illumination effects in GaAs (5-Sn). 124 6.4.1. Introduction 124 6.4.2. The DX centre. 126 6.4.3. Persistent photoconductivity results 128 6.4.4. Explanation of persistent photoconductivity. 132 6.5. Conclusions 137 Summary 143 Samenvatting 145 List of publications 149 Dankwoord 150 It is better to be roughly right, than precisely wrong Keynes 

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Magnetotransport of low dimensional semiconductor and graphite based systems

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International Migration, Integration and Social Cohesion online publications

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