Brehme S

Fuhs W.

Kanschat P.

Lipperheide R.

Weis T.

Wille U.

Hall mobility data for highly n doped muc Si H thin films are quantitatively analyzed in an attempt to understand the role of grain boundaries in carrier transport in microcrystalline materials. Model calculations are performed for samples made up of a linear chain of identical grains. Within the trapping model, band edge profiles are calculated by solving the non linear Poisson equation. Tunneling is taken into account in a fully quantum mechanical treatment. Barrier heights are deduced from the experimental data by adjusting the trapping state density. Owing to the sizeable effect of tunneling. these heights are substantially larger than the activation energies of the Hall mobilitie

Weis, T.

Brehme, S.

Kanschat, P.

Fuhs, W.

Lipperheide, R.

Wille, U.

HZB Repository

Barrier limited carrier transport in highly n doped mu c Si H thin films

Barrier limited carrier transport in highly n doped   c Si H thin films

Barrier limited carrier transport in highly n doped c Si H thin films

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