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Modeling of the photoelectronic characteristics of a new 4H-SiC avalanche photodiode

Abstract

紫外波段的光电探测器广泛应用于火箭发射、导弹跟踪、火焰探测、紫外通信以及紫外辐射测量等领域,具有很高的应用价值。采用4H-SiC半导体材料制备的紫外光电探测器具有低漏电流、高的量子效率、紫外可见抑制比高、抗辐射和耐高温等优点,是目前最具应用前景的紫外光电探测器。国内外多个课题组都对4H-SiC基紫外光电探测器进行了研究,成功制备出了多种结构的性能优越的4H-SiC紫外光电探测器,并在继续探索新结构的性能更优越的光电探测器。 本文基于传统的PIN结构和吸收-倍增-分离(SAM)结构的4H-SiC紫外光电二极管,设计了一种倍增区域较小而吸收区域较大的4H-SiC紫外雪崩光电二极管,可以有效的实现...The detection of ultraviolet light has very high application value in many areas such as rocket launch, missile tracking, flame detection, ultraviolet communication and ultraviolet radiation measurement. The photodetector based 4H-SiC semiconductor materials is currently the most promising ultraviolet photodetector because of its advantages such as low leakage current, high quantum efficiency, hig...学位:理学硕士院系专业:物理与机电工程学院_凝聚态物理学号:1982012115277

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