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DLTS investigations of carrier traps and interface states in large internal gain UV photodetectors based on BGaN wide band gap semiconductor
Authors
A. Ahaitouf
S. Amor
+3 more
A. Ougazzaden
Jean-Paul Salvestrini
H. Srour
Publication date
4 December 2012
Publisher
HAL CCSD
Abstract
International audienc
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oai:HAL:hal-00765273v1
Last time updated on 19/06/2021