Annealing process to stabilize PECVD silicon nitride for application as the gate dielectric in MOS devices

Abstract

Describes a process by which thin films of silicon nitride are deposited on silicon substrates by plasma enhanced chemical vapor deposition techniques, stabilized by post-deposition rapid thermal annealing at temperatures ranging from about 600° C to about 700° C and at times ranging from about 3 seconds to about 30 seconds