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Characterization and Scaling of MOS Flip Flop Performance in Synchronizer Applications

Abstract

The measured and calculated values of t he Flip Flop parameters needed to specify synchronizer reliability are presented for 3 different depletion-load, silicon gate, NMOS, R-S Flip Flop circuits with gate lengths ranging from 6μm to 4.2μm. Estimates of the probability of synchronizer failure to resolve within allowed or desired times can be determined from these parameters

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