CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
Influence of the carrier wafer during GaN etching in Cl2 plasma
Authors
Thibaut Meyer
Erwine Pargon
Camille Petit-Etienne
Publication date
11 January 2022
Publisher
HAL CCSD
Abstract
International audienc
Similar works
Full text
Available Versions
HAL-CEA
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:HAL:hal-03618882v1
Last time updated on 19/05/2022
Hal-Diderot
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:HAL:hal-03618882v1
Last time updated on 11/05/2022
Hal - Université Grenoble Alpes
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:HAL:hal-03618882v1
Last time updated on 19/05/2022
HAL Descartes
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:HAL:hal-03618882v1
Last time updated on 12/08/2022