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19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot
Authors
Gerard Billiot
Silvano De Franceschi
+9 more
Loick Le Guevel
Aloysius, Jansen
Xavier Jehl
Romain Maurand
Gaël Pillonnet
Marc Sanquer
Yvain Thonnart
Maud Vinet
Marcos Zurita
Publication date
16 February 2020
Publisher
'Institute of Electrical and Electronics Engineers (IEEE)'
Doi
Cite
Abstract
International audienc
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Hal - Université Grenoble Alpes
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oai:HAL:hal-02986737v1
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Last time updated on 10/08/2021