The zero energy modes induced by vacancies in ABC stacked trilayer graphene
are investigated. Depending on the position of the vacancy, a new zero energy
solution is realised, different from those obtained in multilayer compounds
with Bernal stacking. The electronic modification induced in the sample by the
new vacancy states is characterised by computing the local density of states
and their localisation properties are studied by the inverse participation
ratio. We also analyse the situation in the presence of a gap in the spectrum
due to a perpendicular electric field.Comment: 6 pages, 4 figures Published in special issue: Exploring Graphene,
Recent Research Advance