Издательский Дом Томского государственного университета
Abstract
In this paper, the possibility of modifying the surface of a hypereutectic silumin (Al-(18-24) wt.%Si) is shown. Modification of the samples was carried out in two stages. At the first stage, a "film (Zr-5% Ti-5% Cu) / (Al- (18-24) wt.% Si) film system was formed by an ion-plasma method with an arc-sputtering of a Zr-5% Ti-5 cathode % Cu in the "TRIO" installation (IHCE SB RAS). In the second stage, the surface layer of the silumin of the hypereutectic composition was doped by melting the "film-substrate" system with an intense pulsed electron beam at the "SOLO" installation