Electronic properties of selected quantum dot (QD) systems are surveyed based on the multi-band k·p method, which we benchmark by direct comparison to the empirical tight-binding algorithm, and we also discuss the newly developed “linear combination of quantum dot orbitals” method. Furthermore, we focus on two major complexes: First, the role of antimony incorporation in InGaAs/GaAs submonolayer QDs and In1−xGax AsySb1−y/GaP QDs, and second, the theory of QD-based quantum cascade lasers and the related prospect of room temperature lasing.TU Berlin, Open-Access-Mittel - 2022EC/H2020/956548/EU/Quantum Semiconductor Technologies Exploiting Antimony/QUANTIMONYEC/H2020/731473/EU/QuantERA ERA-NET Cofund in Quantum Technologies/QuantER
