Design and fabrication of wraparound contact silicon solar cells

Abstract

Both dielectric insulation and etched junction contact techniques were evaluated for use in wraparound contact cell fabrication. Since a suitable process for depositing the dielectrics was not achieved, the latter approach was taken. The relationship between loss of back contact and power degradation due to increased series resistance was established and used to design a simple contact configuration for 10 ohm-cm etched wraparound junction contact N/P cells. A slightly deeper junction significantly improved cell curve shape and the associated loss of current was regained by using thinner contact grid fingers. One thousand cells with efficiencies greater than 10.5% were fabricated to demonstrate the process