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research
Low-temperature hysteresis in the field effect of bilayer graphene
Authors
P. Barthold
Rolf J. Haug
T. Lüdtke
H. Schmidt
Publication date
1 January 2011
Publisher
Bristol : IOP Publishing Ltd.
Doi
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Abstract
Hysteresis in the field effect of bilayer graphene is observed at a low temperature. We attribute this effect to charge traps in the substrate. When the sweep rate of the back-gate voltage is increased to higher values, the hysteresis becomes more pronounced. By measuring the hysteresis in the field effect, the lifetime of the charge traps is estimated as 16.9 min. It is shown that the influence of charge traps on graphene is strongly affected by a magnetic field. Above 5 T the hysteresis remains constant. © IOP Publishing Ltd and Deutsche Physikalische Gesellschaft.DFG/EXC/QUES
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Institutionelles Repositorium der Leibniz Universität Hannover
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Last time updated on 13/04/2017