Relationships between diffusion parameters and phosphorus precipitation during the POCl3 diffusion process

Abstract

The POCl3 diffusion process is still a common way to create the pn-junction of Si solar cells. Concerning the screen-printing process, it is necessary to find a compromise between low emitter recombination, low contact resistance and high lateral conductivity. The formation of a homogeneous emitter during the POCl3 diffusion process depends on several diffusion parameters, including duration, temperature and gas flow. This primarily controls the growth of the highly doped phosphosilicate glass (PSG) layer, which acts as a dopant source during the diffusion process. Detailed investigations of the PSG layer have shown a distinct correlation between the process gas flows and the composition of the PSG layer. Specifically, in this research we examine the influence of phosphorus precipitation at the PSG/Si interface. Furthermore, we show the influence of phosphorus precipitation during the pre-deposition phase on the passivation quality of the corresponding emitter. In a second step, we use the results to create emitters with a reduced density of phosphorus precipitates. In a last step, the optimized emitter structure was transferred to screen-printed solar cell processes, whereby efficiencies up to 19.4% abs. were achieved on monocrystalline p-type Cz material with full area Al-BSF rear side