Influence of Stack Order on the Forming and Switching Behavior of HfO2/TiO2 Bilayer Cells for ReRAM Applications

Authors
Publication date
1 January 2016
Publisher

Abstract

Abstract is not available.

    Similar works

    Full text

    thumbnail-image

    Available Versions

    Juelich Shared Electronic Resources

    redirect
    oaioai:juser.fz-juelich.de:826462
    Last time updated on 10/03/2017