Transparent conductive films are a crucial component of many optoelectronic devices such as displays, solar cells, touch screens, and light-emitting diodes. To date, indium tin oxide (ITO) based TCFs dominate the electronics industry. But a high fabrication cost and non-flexibility of the ITO prevent its application in future generation devices. Among potential candidates such as graphene, polymers and zinc oxide, metallic nanowire and nanoporous layers demonstrate a large potential to replace the ITO. Besides low fabrication cost, flexibility and stretchability, they surpass the optoelectronic performance of ITO. Here we demonstrate silver nanowire (AgNW) and nanoporous (AgNP) layers, which possess the transmittance up to 10% higher than ITO at 20Ω/□ sheet resistance
