The possibility of using chemical vapor deposition (CVD) graphene as a 2D buffer layer for epitaxial growth of III-nitrides by plasma assisted-MBE on amorphous substrates (SiO2 prepared by thermal oxidation of Si wafer) was investigated. The comparative study of graphene-coated parts of the wafers and the parts without graphene was carried out by scanning electron microscopy and X-ray diffractometry. It was shown that epitaxial GaN and AlN films with close to 2D surface morphology can be obtained by plasma assisted-MBE on amorphous SiO2 substrates with a multilayer graphene buffer using the HT AlN nucleation layer
