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TCAD modeling of mixed-mode degradation in SiGe HBTs
Authors
Uppili Srinivasan Raghunathan
Publication date
7 January 2016
Publisher
Georgia Institute of Technology
Abstract
The objective of this work is to develop an effective TCAD based hot-carrier degradation model in predicting the damage that a SiGe HBT undergoes as it is stressed across bias, time and temperature.M.S
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oai:smartech.gatech.edu:1853/5...
Last time updated on 19/02/2017
