SiGe bipolar technologies for low phase noise RF and microwave applications (invited)

Abstract

This paper presents an overview of the low frequency noise performances of both 'abrupt' and 'gradual' SiGe HBTs. We demonstrated that when appropriate device is used, 1/f corner noise frequency in the 1 kHz is obtained. We further presented a correlation with phase noise performances which outperform those reported with III-V devices