InGaAs/InP membrane photodetector bonded on silicon

Abstract

We present the design, fabrication and characterization of a compact photodetector suitable for photonic interconnections on electronic ICs. In our approach, the InP-based optical sources and detectors are linked via Si photonic waveguides in an interconnection layer on top of the CMOS circuitry. The photonic device processing is compatible with Si wafer scale fabrication steps, which guarantees compatibility with future ICs manufacture. The detector maskes use of an InP membrane waveguide to couple the light out of the interconnection layer and carry it towards the absorption region. A responsivity of 0.45 A/W and a rather flat frequency response in the 0-20 GHz range were measured