In situ spectroscopic ellipsometry for atomic layer deposition

Abstract

The application of in situ spectroscopic ellipsometry during thin film synthesis by atomic layer deposition (ALD) is examined for results obtained on Al2O3, TaN2, and TiN films with thicknesses ranging from 0.1 to 100 nm. By analyzing the film thickness and the energy dispersion of the optical constants of the films, the layer-by-layer growth and material properties of the ALD films can be studied in detail. The growth rate per cycle and the nucleation behavior of the films can be addressed by monitoring the thickness as a function of the number of cycles. It is shown that from the energy dispersion relation, insight into the conductive properties of metallic films can be derived. Moreover, the shape of the dispersion relation can be used to discriminate between different material compositions