Charalambous, Apollo

Geng, Yiwen

Wu, Xioajie

Yan, Qingzeng

Yuan, Xibo

Qingzeng Yan

Xibo Yuan

Yiwen Geng

Apollo Charalambous

Xiaojie Wu

Crossref

IEEE Transactions on Power Electronics

Performance Evaluation of Split Output Converters With SiC MOSFETs and SiC Schottky Diodes

The adoption of silicon carbide (SiC) MOSFETS and SiC Schottky diodes in power converters promises a further improvement of the attainable power density and system efficiency, while it is restricted by several issues caused by the ultra-fast switching, such as phase-leg shoot-through (‘crosstalk’ effect), high turn-on losses, electromagnetic interference (EMI), etc. This paper presents a split output converter which can overcome the limitations of the standard two-level voltage source converters when employing the fast-switching SiC devices. A mathematical model of the split output converter has been proposed to reveal how the split inductors can mitigate the crosstalk effect caused by the high switching speed. The improved switching performance (e.g. lower turn-on losses) and EMI benefit have been demonstrated experimentally. The current freewheeling problem, the current pulses and voltage spikes of the split inductors, and the disappeared synchronous rectification are explained in detail both experimentally and analytically. The results show that, the split output converter can have lower power device losses compared with the standard two-level converter at high switching frequencies. However, the extra losses in the split inductors may impair the efficiency of the split output converter, which is verified by experiments in the continuous operating mode. A 95.91% efficiency has been achieved by the split output converter at the switching frequency of 100kHz with suppressed crosstalk, lower turn-on losses, ad reduced EMI

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Performance Evaluation of Split Output Converters with SiC MOSFETs and SiC Schottky Diodes

https://research-information.bris.ac.uk/files/69871973/07425221.pdf

Performance Evaluation of Split Output Converters with SiC MOSFETs and SiC Schottky Diodes

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