CORE
🇺🇦
make metadata, not war
Services
Services overview
Explore all CORE services
Access to raw data
API
Dataset
FastSync
Content discovery
Recommender
Discovery
OAI identifiers
OAI Resolver
Managing content
Dashboard
Bespoke contracts
Consultancy services
Support us
Support us
Membership
Sponsorship
Community governance
Advisory Board
Board of supporters
Research network
About
About us
Our mission
Team
Blog
FAQs
Contact us
阳极氧化铝工艺用于提高LED的出光效率
Authors
伊晓燕
刘志强
+5 more
李琪
潘岭峰
王军喜
王晓峰
王良臣
Publication date
1 January 2011
Publisher
Abstract
使用纳米尺度的多孔阳极氧化铝(anodic aluminum oxide,AAO)作为刻蚀掩膜,刻蚀氧化铟锡(indium-tin oxide,ITO),形成纳米图形化表面,对于发光二极管的出光效率有明显的提升作用.AAO纳米掩膜的制备已广为报道,是纳电子学研究中常用的模板之一,工艺简单易行,可控性好.使用电感耦合反应离子刻蚀方法成功将纳米多孔结构转移到ITO上,形成ITO纳米结构.纳米图形化结构的引入使得器件有效减小了内部的全反射,在电压没有大幅提高,注入电流350 mA时,光学输出提高了7%.纳米尺度粗化结构LED与传统结构LED对比,提升了器件的外量子效
Similar works
Full text
Available Versions
Knowledge Repository of SEMI,CAS
See this paper in CORE
Go to the repository landing page
Download from data provider
oai:ir.semi.ac.cn:172111/23302
Last time updated on 29/11/2016