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沉积气压对相变域硅薄膜性能的影响
Authors
孔光临
廖显伯
+3 more
曾湘波
李伟民
郝会颖
Publication date
1 January 2011
Publisher
Abstract
采用甚高频等离子体增强化学气相沉积(VHF-PECVD)法,成功制备出一系列从非晶到微晶过渡区域的硅薄膜。研究了气体压强对样品的微结构、光电特性、输运性质以及沉积速率的调控作用。结果表明,增大沉积气压可以提高材料的光敏性及沉积速率,但材料的结构有序度以及输运特性变差
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Last time updated on 29/11/2016