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用固相外延方法制备Si_(1-x-y)Ge_xC_y三元材料
Authors
于卓
余金中
+6 more
成步文
李代宗
梁骏吾
王启明
雷震霖
黄昌俊
Publication date
1 January 2000
Publisher
Abstract
分析了Si_(1-x-y)Ge_xC_y三元系材料外延生长的特点,指出原子性质上的巨大差异使Si_(1-x-y)G_xC_y材料的制备比较困难。固相外延生长是制备Si_(1-x-y)Ge_xC_y的有效方法,但必须对制备过程各环节的条件进行优化选择。通过实验系统地研究了离子注入过程中温度条件的控制对外延层质量的影响以及外延退火条件的造反与外延层结晶质量的关系。指出在液氮温度下进行离子注入能够提高晶体质量,而注入过程中靶温过高会导致动态退火效应,影响以后的再结晶过程。采用两步退火方法有利于消除注入引入的点缺陷,而二次外延退火存在着一个最佳退火温区,在此基础上优化得出了固相外延方法制备Si_(1-x-y)Ge_xC_y/Si材料的最佳条件
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Last time updated on 29/11/2016