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MBE InGaAs/GaAs外延层晶胞弛豫直接测量的X射线双晶衍射方法
Authors
周增圻
庄岩
+3 more
林耀望
王玉田
马文全
Publication date
1 January 1997
Publisher
Abstract
采用了以解理面为衍射基面,直接测量水平弛豫的方法测量了In_xGa_(1-x)As(衬底为GaAs,X-0.1)外延层的应变及其弛豫状态。在以解理面为衍射基面的衍射曲线上清楚地观测到了衬底峰与外延峰的分裂。表明当InGaAs层厚度较厚(-2μm)时,InGaAs外延层与衬底GaAs已处于非共格生长状态,同时发现大失配的InGaAs晶胞并没有完全弛豫恢复到自由状态。其平行于表面法线的晶格参数略大于垂直方向上的晶格参数(△α/α-10~(-3))。并且晶胞在弛豫过程中产生了切向应变。在考虑了切向应变的基础上准确地确定出了InGaAs层的In组分x
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Last time updated on 29/11/2016