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C离子注入Si中Si_(1-x)C_x合金的形成及其稳定性
Authors
孙国胜
李晋闽
+4 more
林兰英
王引书
王玉田
金运范
Publication date
1 January 2000
Publisher
Abstract
利用离子注入和高温退火的方法在Si中生长了C含量为0.6%~1.0%的Si_(1-x)C_x合金,研究了不同注入剂量下Si_(1-x)C_x合金的形成及其在退火过程中的稳定性。如果注入剂量小于引起Si非晶化的剂量,850℃退火后,注入产生的损伤缺陷容易与C原子结合形成缺陷团簇,难于形成Si_(1-x)C_x合金。随着注入C离子剂量的增大,注入产生的损伤增强,容易形成Si_(1-x)C_x合金,但注入的剂量增大到一定程度,Si_(1-x)C_x合金的应变将趋于饱和,即只有部分C原子进入晶格位置形成合金相。Si_(1-x)C_X合金一旦形成,在950℃仍比较稳定,而温度高于1000℃,合金的应力将部分释放。随着合金中C原子浓度的升高,合金的稳定性变差
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Last time updated on 29/11/2016