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氢化非晶硅氧薄膜微结构
Authors
刁宏伟
孔光临
+8 more
廖显伯
张世斌
徐艳月
李国华
王永谦
程文超
陈维德
陈长勇
Publication date
1 January 2002
Publisher
Abstract
以Raman散射、X射线电子能谱和红外吸了光谱细致研究了PECVD法250℃衬底温度下制备的氢化非晶硅氧(a-SiOx:H)薄膜的微结构及键构型。研究表明,在0.52≤x≤1.58的氧含量范围内,a-SiOx:H薄膜成分和结构不是均一的,依赖于局域键构型氧化程度的不同,大致存在着5种在一定程度上相互分离的结构组分,即Si,Si2O(:H),SiO(:H),Si2O3(:H)和SiO2。其中的Si相以非氢化的非晶硅(a-Si)颗粒形式存在,随氧含量x的增加其尺度持续减小但始终存在。提出一种多壳层模型来描述a-SiOx:H薄膜的结构,认为a-SiOx:H薄膜中a-Si颗粒依次为Si2O(:H),SiO(:H),Si2O3(:H)和SiO2壳层所包围。随薄膜氧含量x的增加,各壳层厚度相应变化但各自的化学构成基本保持不变
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Last time updated on 29/11/2016