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热退火γ-Al_2O_3/Si异质结构薄膜质量改进
Authors
刘忠立
林兰英
+6 more
王俊
王启元
王建华
谭利文
邓惠芳
郁元桓
Publication date
1 January 2002
Publisher
Abstract
采用高真空MOCVD外延技术,利用TMA(Al(CH_3)_3)和O_2作为反应源,在Si(100)衬底上外延生长γ-Al_2O_3绝缘膜形成γ-Al_2O_3/Si异质结构材料。同时,引入外延后退火工艺以便改善γ-Al_2O_3薄膜的晶体质量及电学性能。测试结果表明,通过在O_2常压下的退火工艺可以有效地消除γ-Al_2O_3外延层的残余热应力及孪晶缺陷,改善外延层的晶体质量,同时可以提高MOS电容的抗击穿能力,降低漏电电流
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Last time updated on 29/11/2016