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氦离子注入形成980nm脊型波导激光器腔面非注入区的研究
Authors
刘斌
张敬明
肖建伟
马骁宇
Publication date
1 January 2003
Publisher
Abstract
报道了氦离子注入技术在提高980nm半导体激光器灾变性光学损伤(catastrophic optical damage,COD)阈值上的应用.p-GaAs材料经氦离子注入后可以获得的电阻率。在距离腔面25μm的区域内进行氦离子注入,由此形成腔面附近的电流非注入区。腔面附近非注入区减少了腔面载流子的注入,因此减少了非辐射复合的发生,提高了激光器的灾变性光学损伤阈值。应用氦离子注入形成腔面非注入区的管芯的平均最大功率达到440.5mW,没有发生COD现象。而应用常规工艺制作的管芯的平均COD阈值功率为407.5mW。同常规工艺相比,应用氦离子注入形成腔面非注入区技术使管芯的最大输出功率提高了8%
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Last time updated on 29/11/2016