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纳米硅薄膜的发光特性研究
Authors
何宇亮
傅东锋
+3 more
刘明
李国华
韩和相
Publication date
1 January 2001
Publisher
Abstract
研究了nc-Si:H薄膜的光致发光(PL),分析了晶粒尺寸、温度对发光特性的影响。对发光样品,晶粒尺寸有一上限,其值在4~5nm这间。在10~77K,nc-SiH薄膜的发光强度几乎没有变化;当温度高于77K,发光强度指数式下降。随温度升高,发光峰位有少许红移。讨论了nc-Si:H光致发光机理,用量子限制-发光中心模型对实验现象进行了解释。从载流子的激发、复合两方面讨论了发光过程,认为载流子在晶粒内部激发后,弛豫到晶粒界面的发光中心复合发光
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Last time updated on 29/11/2016