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在p-Si(100)上溅射法生长ZnO的结构和光学特性
Authors
刘志凯
姚振钰
+9 more
廖梅勇
张建辉
杨少延
林兰英
柴春林
王占国
秦复光
范正修
贺洪波
Publication date
1 January 2000
Publisher
Abstract
室温下在p-Si(100)上采用直流反应磁控溅射法外延生长了ZnO薄膜。XRD测量表明了ZnO是高度c轴单一取向生长的,XRC测量则表明了ZnO的高质量。在室温下的PL测量中见到了带边发射,其强度与晶体质量有关
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Last time updated on 29/11/2016