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GAN_(1-x)P_x三元合金的MOCVD生长
Authors
万寿科
孙学浩
+10 more
张开骁
张荣
施毅
毕朝霞
沈波
王占国
胡立群
郑有(火+斗)
陈敦军
顾书林
Publication date
1 January 2002
Publisher
Abstract
用金属有机化学气相淀积技术在蓝宝石衬底上成功外延了高P组分的GaN_(1-x)P_x 三元合金。俄歇电子能谱深度剖面结果表明在GaN_(1-x)P_x 中P的掺入量最高达到20%且分布均匀;X射线光电子能谱价态分析证实了外延层中Ga-P键的存在。对不同P组分的GaN_(1-x)P_x 样品进行了低温光致发光(PL)测试,与来自GaN衬底的带边发射相比,随三元合金中P组分的变化,GaN_(1-x)P_x 的PL峰呈现出了不同程度的红移。在GaN_(1-x)P_x 的PL谱中没有观测到有关GaP的发射峰,表明该合金材料没有发生相分离
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Last time updated on 29/11/2016