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单边掺杂InAlAs/InGaAs单量子阱中二维电子气的磁输运特性
Authors
仇志军
周文政
+7 more
姚炜
崔利杰
朱博
林铁
桂永胜
褚君浩
郭少令
Publication date
1 January 2006
Publisher
Abstract
研究了双子带占据的In0.52Al0.48As/In0.53Ga0.47As单量子阱中磁电阻的Shubnikov-de Haas(SdH)振荡效应和霍耳效应,获得了不同子带电子的浓度、迁移率、有效质量和能级位置.低磁感应强度(B〈1.5T)下由迁移率谱和多载流子拟合相结合的方法得到的各子带电子浓度与通过SdH振荡得到的结果一致.在d^2ρ/dB^2-1/B的快速傅里叶变换谱中,观察到除了通常强烈依赖温度的对应于各子带的频率f1和f2以及f1的倍频(2f1)外,还观察到对温度不敏感的频率f1-f2.这是由于量子阱中不同子带的电子具有相近的有效质量,两个子带之间发生了强烈的磁致子带间散射
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Last time updated on 29/11/2016