p型纳米硅与a-Si∶H不锈钢底衬nip太阳电池

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Publication date
1 January 2005
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Abstract

报道了选用厚度为0．05mm的不锈钢箔作衬底，B掺杂P型氢化纳米硅作窗口层，制备成功开路电压和填充因子分别达到0．90V和0．70的nip非晶硅基薄膜单结太阳电池．UV-VIS透射谱和微区Raman谱证实所用p层具有典型氢化纳米硅的宽能隙和含有硅结晶颗粒的微结构特征．明确指出导致这种氢化纳米硅能隙展宽的物理机制是量子尺寸效应

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