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表面处理对p-GaN欧姆接触的影响
Authors
刘志强
师宏伟
+5 more
梁萌
王国宏
王良臣
范曼宁
郭德博
Publication date
1 January 2007
Publisher
Abstract
分别用稀盐酸、王水以及(NH_4)_2S溶液处理p-GaN表面,通过测试样品表面Ols的X射线光电子能谱(XPS),比较了这些溶液去除p-GaN表面氧化层的能力;在经不同溶液处理后的样品表面,以相同的条件制作Ni/Au电极,并测试其与p-GaN的比接触电阻,结果表明经稀盐酸处理后的样品表面,由于其氧含量较高,不能与Ni/Au形成良好的欧姆接触,而经王水和(NH_4)_2S溶液处理后的p-GaN表面,能与Ni/Au形成良好的欧姆接触;最后,通过比较样品表面的Ga/N原子浓度比,探讨了王水处理p-GaN表面能够形成良好欧姆接触的原因
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Last time updated on 29/11/2016