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取样光栅分布布拉格反射半导体激光器的制作方法
Authors
刘泓波
朱洪亮
+3 more
潘教青
王 圩
赵玲娟
Publication date
12 August 2010
Publisher
Abstract
一种取样光栅分布布拉格反射半导体激光器的制作方法,包括:在n型InP衬底上分别外延InP缓冲层和介质膜;在介质膜上刻出条形凹槽,并依次生长InGaAsP下限制层、InGaAsP/InGaAsP多量子阱、InGaAsP上限制层和InP光栅制作保护层;去除介质膜;刻出多条取样光栅窗口;制作取样光栅;腐蚀保护层;依次生长p-InP层、p-InGaAsP刻蚀阻止层、p-InP层和p+-InGaAs层;形成脊形波导;刻蚀形成电隔离沟;在p-InGaAsP刻蚀阻止层上进行He离子注入;在上述步骤制作的器件结构的上表面和脊形波导的侧面淀积介质绝缘层;在器件的上表面溅射p电极;将衬底减薄,并蒸发n电极,解理管芯,完成器件的制作
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Last time updated on 29/11/2016