The point spread function (PSF) is an important measure of spatial resolution in CCDs for point-like objects, since it affects image quality and spectroscopic resolution. We present new data and theoretical developments for lateral charge diffusion in thick, fully-depleted charge-coupled devices (CCDs) developed at Lawrence Berkeley National Laboratory (LBNL). Because they can be over-depleted, the LBNL devices have no field-free region and diffusion is controlled through the application of an external bias voltage. We give results for a 3512 x 3512 format, 10.5 {micro}m pixel back-illuminated p-channel CCD developed for the SuperNova/Acceleration Probe (SNAP), a proposed satellite-based experiment designed to study dark energy. The PSF was measured at substrate bias voltages between 3 V and 115 V. At a bias voltage of 115 V, we measure an rms diffusion of 3.7 {+-} 0.2 {micro}m. Lateral charge diffusion in LBNL CCDs will meet the SNAP requirements
