Recent years have seen an explosion of interest in the narrow band gap end of the InGaN alloy system, particularly in InN. The existence of surface electron accumulation and a tendency for n-type conductivity have been well-established and are explained by an extremely large electron affinity and the location of the Fermi level stabilization energy (E{sub FS}) high in the conduction band [1]. These characteristics pose significant challenges to the integration of In-rich InGaN into devices and demonstrate the need for a better understanding of the relationship between native defects and electronic transport in the alloy system. It has been previously shown that high-energy particle irradiation can predictably control the electronic properties of In-rich InGaN [1]. With increasing irradiation dose, the electron concentration (n) increases and the electron mobility ({mu}) decreases until the Fermi level reaches E{sub FS}, which is the saturation point. The value of n at saturation decreases with decreasing In fraction, due to the raising of the conduction band edge with respect to E{sub FS}
