This study quantifies the heat dissipation potential of three inverter package configurations over a range of control factors. These factors include coolant temperature, number of sides available for cooling, effective heat transfer coefficient, maximum semiconductor junction temperature, and interface material thermal resistance. Heat dissipation potentials are examined in contrast to a research goal to use 105..deg..C coolant and dissipate 200 W/cm2 heat across the insulated gate bipolar transistor and diode silicon area. Advanced double-sided cooling configurations with aggressive heat transfer coefficients show the possibility of meeting these targets for a 125..deg..C maximum junction temperature, but further investigation is needed. Even with maximum tolerable junction temperatures of 200..deg..C, effective heat transfer coefficients of 5,000 to 10,000 W/m2-K will be needed for coolant temperatures of 105..deg..C or higher
