Landé g factor factor in GaAs-Ga1−xAlxAs low-dimensional systems

Abstract

We have performed a theoretical study of the electron effective Land ¿e g factor in GaAs-(Ga,Al)As cylindrical low-dimensional heterostructures under and axis-parallel ap- plied magnetic field. Numerical calculations of the g factor are performed by using the Ogg-McCombe effective Hamiltonian, which includes non-parabolicity and anisotropy ef- fects for the conduction-band electrons. The low-dimensional heterostructure is assumed to consist of a cylinder of GaAs surrounded by a Ga1¿xAlxAs barrier considering the lim- iting cases of 1D, 2D and 3D confinements. Theoretical results are given as functions of the Al concentration in the Ga1¿xAlxAs barrier, radii, lengths, magnetic fields and applied hydrostatic pressure. We have studied the role played by each of this parameters and the competition between them, finding that the geometrical confinement and Al concentration command the behavior of the electron-effective Land ¿e g|| factor. Present theoretical results are in very good agreement with experimental reports and with previous theoretical results.MaestríaMAGISTER EN CIENCIAS - FÍSIC