The performance of double dielectric (MIIM) resonant tunneling diodes using atomic layer deposited oxides of low (Al2O3) and high (Ta2O5) electron affinity (χ) is investigated. Varying the individual layer thickness of Ta2O5 with a 1 nm thick Al2O3, evidence for resonant tunneling is observed and related to the bound states in the quantum well established between the oxide layers. The results show good rectifying capability of resonant tunneling diodes at low turn-on voltage enabling their potential use for terahertz applications
