This paper reports about the study of tunable anti-guiding factor and gain spectra of type-I GRIN (Graded Refractive Index) compressively strained InGaAlAs/InP nano-heterostructure. Through the modeling and mathematical simulation, the tuning behaviors of optical gain, differential gain and refractive index-change with carrier densities have been studied in the presence of internal strain which occurs due to lattice mismatch. According to the results, both the anti-guiding factor and optical gain are enhanced as increase in the percentage compressively strain. The lasing wavelength has also been found to shift towards lower values with increasing strain. These studies explain the tunability of the studied heterostructure and mostly utilized in optical fiber based communication systems

Alvi, P.A.

Bhardwaj, Garima

Kattayat, Sandhya

Lal, Pyare

SocioEconomic Challenges Journal (Sumy State University)

JOURNAL OF NANO- AND ELECTRONIC PHYSICS ЖУРНАЛ НАНО- ТА ЕЛЕКТРОННОЇ ФІЗИКИ 
Vol. 12 No 2, 02002(3pp) (2020) Том 12 № 2, 02002(3cc) (2020) 
 
 
2077-6772/2020/12(2)02002(3) 02002-1  2020 Sumy State University 
Tunable Anti-Guiding Factor and Optical Gain of InGaAlAs/InP Nano-Heterostructure  
under Internal Strain  
 
Pyare Lal1, Garima Bhardwaj2, Sandhya Kattayat3, P.A. Alvi1,* 
 
1 Department of Physics, Banasthali Vidyapith-304022 Rajasthan, India 
2 Department of Electronics & Communication Engineering, IIMT Engineering College, Meerut-250001, UP, India 
3 Higher Colleges of Technology, Abu Dhabi, UAE 
 
(Received 15 February 2020; revised manuscript received 10 April 2020; published online 25 April 2020) 
 
This paper reports about the study of tunable anti-guiding factor and gain spectra of type-I GRIN 
(Graded Refractive Index) compressively strained InGaAlAs/InP nano-heterostructure. Through the model-
ing and mathematical simulation, the tuning behaviors of optical gain, differential gain and refractive in-
dex-change with carrier densities have been studied in the presence of internal strain which occurs due to 
lattice mismatch. According to the results, both the anti-guiding factor and optical gain are enhanced as 
increase in the percentage compressively strain. The lasing wavelength has also been found to shift to-
wards lower values with increasing strain. These studies explain the tunability of the studied heterostruc-
ture and mostly utilized in optical fiber based communication systems.  
 
Keywords: Anti-Guiding Factor, Optical gain, Differential gain, Current density  
 
DOI: 10.21272/jnep.12(2).02002 PACS numbers: 42.55.Ah, 42.60.Lh, 73.21.Fg 
 
 
                                                                
* drpaalvi@gmail.com 
1. INTRODUCTION 
 
The III-V compound semiconducting materials such 
InGaAs, InAlAs, AlGaAs, GaAsSb, InGaAlAs etc have 
been reported as the potential candidates in the mod-
ern light-wave technologies having usage in manufac-
turing the photon emitting devices or radiations sens-
ing devices [1-7]. In particular, the quaternary materi-
als such as InGaAlAs nano-heterostructure have drawn 
a very high attention due to their emissions lying in 
the region of ~ 1.55 m wavelength [8-12]. Actually, the 
radiations produced with such wavelengths are of most 
widely usage and, thus, have a variety of applications. 
Further, the optical sources like InGaAlAs/InP hetero-
structure with the release of 1.55 m radiations can 
often be preferred for optical broadcast due to eye pro-
tection issues. Though, a lot of study has been carried 
out on such material system, but still some more study 
is needed in context of some parametric relations. For 
example, gain vs compressive strain, optical wave-
length vs compressive strain, differential gain vs carier 
density are the relations of interest.  
In the next sections of this article, a collective study 
of the optical gain characteristics in terms of wave-
length taking into account the internal strain (com-
pressive nature) that may occur due to lattice misalli-
ance, the peak gain along with the optimized wave-
length due to the compressive strains have been car-
ried out. Furthermore, the refractive index profile as 
well as differential gain for different values of the com-
pressive strain has also been analysed. 
 
2. STRUCTURAL AND THEORITICAL DETAIL 
 
The quaternary compound material i.e. InGaAlAs 
with the compositions of In0.71Ga0.21Al0.08As having 
graded refractive index with the straddling nature has 
been utilized as an active region to design the  hetero-
structure. The composition of the material is selected in 
such a way so that desired wavelength corresponding 
to the peak gain could be achieved. The quantum well 
(thickness ~ 6 nm) of In0.71Ga0.21Al0.08As is sandwiched 
in between twenty graded refractive index layers 
(thickness ~ 0.5 nm) of wide band gap material 
In0.41Ga0.34Al0.25As (as a barrier) followed by cladding 
(thickness ~ 10 nm) of material In0.52Al0.48As. The 
whole structure is considered to be grown on InP sub-
strate. Here, we have selected InP as a substrate be-
cause InP has a wider band gap as compared to the 
active layer and therefore has the advantage that a 
zero amount of radiative energy is absorbed inside the 
substrate region. 
The optical gain for the studied device can be simu-
lated with the following equation [12-14]; 
 
     
22
2
0 0
gb
g
E
B
r,ij ij ij c
i, j Eeff
q M
G E m C A f f L E E dE
E m c n W


   
 
The first differentiation of optical gain with respect 
to carrier density is referred as differential gain. The 
optical gain in terms of differential gain and carrier 
concentration is given by below relation: 
 
     trG N G N N N     ,  
 
where G(N) stands for differential gain, N and Ntr 
stand for carrier concentrations and transparency car-
rier densities. The relation between differential refrac-
tive index and differential gain is given by Anti-
Guiding factor. The Anti-Guiding factor is expressed as 
below equation.
    
 
 
   
1
1
4
dn E dG E
dN dN
 


    
                 
,  
 
where  stands for wavelength of light propragation 
and the quantity dn(E)/dN stands for differential re-
 PYARE LAL, GARIMA BHARDWAJ, SANDHYA KATTAYAT, P.A. ALVI J. NANO- ELECTRON. PHYS. 12, 02002 (2020) 
 
 
02002-2 
fractive index with carrier concentrations; while the 
quantity dG(E)/dN stands for differential gain with 
carrier concentrations. 
 
3. RESULTS AND THEIR PREDICTIONS 
 
In general, the study of optical gain has an essential 
role in the realization of laser based on the semicon-
ducting heterostructures [15, 16]. The optical gain 
provides a key role in the description of amplification of 
intensity of light in the semiconductor based materials 
[17, 18]. Basically, in the semiconducting heterostruc-
tures the optical gain occurs due to stimulated emis-
sion associated with the emission of light created by 
electron-hole recombination. In the semiconductors 
optical gain is caused by photon induced transition of 
electrons from the conduction band to valence sub 
bands. If the rate of down ward transitions surpasses 
the rate of upward transitions, there will be a net gen-
eration of photons and optical gain can be attained. 
 
0.4 0.6 0.8 1.0 1.2 1.4 1.6
-4000
-2000
0
2000
4000
6000
8000
4.17%
3.17%
2.17%
1.17%
Compressive Strain dependent Optical Gain with 
Lasing wavelength and Photonic energy for InGaAlAs/InP 
Straddled Heterostructure
Photonic Energy (eV)
O
p
ti
c
a
l 
G
a
in
 (
c
m
-1
)
Lasing Wavelength (micrometer)
0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
 
 
 
Fig. 1 – Variations in optical gain with lasing wavelength and 
photonic energies for various percentage strains 
 
In the nano scale heterostructures, the optical gain 
is measured in per centimetres because it is given by 
the enhancement in the intensity of light per unit orig-
inally intensity and per unit length. 
The variations of optical gain with lasing wave-
length is represented by left (y) and bottom (x) axes and 
variations of optical gain with photonic energies repre-
sented by by left (y) and top (x) axes for various per-
centage compressive strain of InGaAlAs/InP straddling 
type nano scale heterostructure in Fig. 1. It is clearly 
exhibited by Fig. 1 that the peak optical gains increase 
with increase in percentage compressive strain and the 
peaks of spectra are shifted towards lower values of 
lasing wavelength and higher values of photonic ener-
gies. The proportional behaviors of peak optical gain 
and inversely behaviors of lasing wave length with 
percentage compressive strain for InGaAlAs/InP strad-
dling type nano scale heterostructure are shown by 
Fig. 2. In other words, Fig. 2 predicts that peak optical 
gain and peak gain wavelength (lasing wavelength) 
play inversely behavior to each other. Moreover, for 
internal strain 4.17 %, the peak optical gain is found ~ 
6200/cm at lasing wavelength ~ 1280 nm; for internal 
strain 3.17 %, the peak optical gain is found ~ 5800/cm 
at lasing wavelength ~ 1350 nm; for internal strain 
2.17 %, the peak optical gain is found ~ 4700/cm at 
lasing wavelength ~ 1480 nm; and for internal strain 
1.17 %, the peak optical gain is found ~ 4200/cm at 
lasing wavelength ~ 1550 nm. Hence this proposed 
heterostructure is more utilized in NIR radiation appli-
cations as well as optical fiber based communication 
systems due lowest optical losses [19, 20].  
 
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
4000
4500
5000
5500
6000
6500
7000
Maximum Optical Gain and Lasing wavelength with
 Compressive strain for InGaAlAs/InP
 Straddled heterostructure
Compressive Strain (%)
M
a
x
im
u
m
 O
p
ti
c
a
l 
G
a
in
 (
c
m
-1
)
1.25
1.30
1.35
1.40
1.45
1.50
1.55
1.60
1.65
L
a
s
in
g
 W
a
v
e
le
n
g
th
 (m
ic
ro
m
e
te
r)
 
 
Fig. 2 – Behaviors of peak (maximum) optical gain and lasing 
wavelength with percentage compressive strain 
 
The index of refraction as well as dielectric constant 
depends on the charge carrier densities that is elec-
trons and holes densities. In the semiconductor hetero-
structures devices, fluctuations in the carrier concen-
tration affect both the optical differential gain and 
change in index of refraction. The behaviors of varia-
tions in index of refraction with current densities by 
left (y) and bottom (x) axes and behaviors of variations 
in differential gain with carrier densities by right (y) 
and top (x) axes for various percentage compressive 
strain of InGaAlAs/InP straddling type nano scale 
heterostructure are shown in Fig. 3. It is predicted by 
Fig. 3, that the differential gain has reciprocal propor-
tional behavior with carrier densities. Next the maxi-
mum (peak) differential gain and saturated refractive 
index change both have proportional behavior with 
percentage internal strain. 
It is very necessary to optimize the properties of de-
vice performance for accurate prediction of the optical 
gain and refractive index change in the semiconducting 
heterostructure. The coupling between optical gain and 
refractive index change induced by carrier concentra-
tion is termed as Anti-guiding factor. In other words 
the ratio of change in index of refraction per unit carri-
er concentration and change in optical gain per unit 
carrier concentration is called Anti-guiding factor. This 
type factor has crucial role in the prediction of beam 
quality of lasing devices and filamentation phenomena. 
In the heterostructure based lasers the Anti-Guiding 
factor provides substantial role as a crucial design 
parameter for high speed modulation. This type factor 
is a key parameter in the semiconductor lasing devices 
under continuous wave (CW) operation and high fre-
 TUNABLE ANTI-GUIDING FACTOR AND OPTICAL GAIN… J. NANO- ELECTRON. PHYS. 12, 02002 (2020) 
 
 
02002-3 
quency (HF) modulation. It can be characterized the 
line -width broadening due to fluctuation in the carrier 
concentrations altering the index of refraction. The 
behaviors of optical gain with current densities and 
range of Anti-Guiding factor with carrier densities by 
left (y) and bottom (x) axes and right (y) and top (x) 
axes respectively for various percentage compressive 
strain of InGaAlAs/InP straddling type nano scale 
heterostructure are shown in Fig. 4. 
 
0 500 1000 1500 2000 2500 3000
-0.08
-0.07
-0.06
-0.05
-0.04
-0.03
-0.02
-0.01
0.00
0.01
 Compressive Strain dependent 
Refractive Index Change and 
Differential Gain for InGaAlAs/InP 
4.17%
3.17%
2.17%
1.17%
4.17%
3.17%
2.17%
1.17%
Carrier Density (x10
18
/cm
3
)
D
if
fe
re
n
ti
a
l 
g
a
in
 (
x
1
0
-1
5
c
m
2
)
R
e
fr
a
c
ti
v
e
 I
n
d
e
x
 C
h
a
n
g
e
Current Density (A/cm
2
)
-2 0 2 4 6 8
0
3
6
9
12
15
18
 
 
 
 
Fig. 3 – Behaviors of change in index of refraction with cur-
rent densities and variations in differential gain with carrier 
densities for various percentage strain (compressive)  
0 500 1000 1500 2000 2500 3000
-20
0
20
40
60
80
4.17% 3.17%
2.17%
1.17%
4.17%
3.17%
2.17%
1.17%
Compressive Strain dependent Optical Gain and 
Anti-guiding Factor for InGaAlAs/InP 
A
n
ti
-G
u
id
in
g
 F
a
c
to
r
Carrier Density (x10
18
/cm
3
)
O
p
ti
c
a
l 
G
a
in
 (
x
1
0
2
/c
m
)
Current Density (A/cm
2
)
-2 0 2 4 6 8
1
2
3
4
5
6
7
8
 
 
 
Fig. 4 – Variations in optical gain with current densities and 
variations in Anti-Guiding factor with carrier densities for 
various percentage strain (compressive) 
 
AKNOWLEDGEMENTS 
 
Authors are indebted to Banasthali Vidyapith for 
supporting the research facilities under CURIE project 
sanctioned by the DST, Government of India, New-
Delhi. 
 
 
 
 
REFERENCES 
 
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E 46, 224 (2012).  
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Eng. Med. 5 No 9, 918 (2013). 
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85, 035402 (2012).  
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English

Tunable Anti-Guiding Factor and Optical Gain of InGaAlAs/InP Nano-Heterostructure under Internal Strain

Electronic Sumy State University Institutional Repository

JOURNAL OF NANO- AND ELECTRONIC PHYSICS ЖУРНАЛ НАНО- ТА ЕЛЕКТРОННОЇ ФІЗИКИ Vol. 12 No 2, 02002(3pp) (2020) Том 12 № 2, 02002(3cc) (2020)   2077-6772/2020/12(2)02002(3) 02002-1  2020 Sumy State University Tunable Anti-Guiding Factor and Optical Gain of InGaAlAs/InP Nano-Heterostructure  under Internal Strain   Pyare Lal1, Garima Bhardwaj2, Sandhya Kattayat3, P.A. Alvi1,*  1 Department of Physics, Banasthali Vidyapith-304022 Rajasthan, India 2 Department of Electronics & Communication Engineering, IIMT Engineering College, Meerut-250001, UP, India 3 Higher Colleges of Technology, Abu Dhabi, UAE  (Received 15 February 2020; revised manuscript received 10 April 2020; published online 25 April 2020)  This paper reports about the study of tunable anti-guiding factor and gain spectra of type-I GRIN (Graded Refractive Index) compressively strained InGaAlAs/InP nano-heterostructure. Through the model-ing and mathematical simulation, the tuning behaviors of optical gain, differential gain and refractive in-dex-change with carrier densities have been studied in the presence of internal strain which occurs due to lattice mismatch. According to the results, both the anti-guiding factor and optical gain are enhanced as increase in the percentage compressively strain. The lasing wavelength has also been found to shift to-wards lower values with increasing strain. These studies explain the tunability of the studied heterostruc-ture and mostly utilized in optical fiber based communication systems.   Keywords: Anti-Guiding Factor, Optical gain, Differential gain, Current density   DOI: 10.21272/jnep.12(2).02002 PACS numbers: 42.55.Ah, 42.60.Lh, 73.21.Fg                                                                   * drpaalvi@gmail.com 1. INTRODUCTION  The III-V compound semiconducting materials such InGaAs, InAlAs, AlGaAs, GaAsSb, InGaAlAs etc have been reported as the potential candidates in the mod-ern light-wave technologies having usage in manufac-turing the photon emitting devices or radiations sens-ing devices [1-7]. In particular, the quaternary materi-als such as InGaAlAs nano-heterostructure have drawn a very high attention due to their emissions lying in the region of ~ 1.55 m wavelength [8-12]. Actually, the radiations produced with such wavelengths are of most widely usage and, thus, have a variety of applications. Further, the optical sources like InGaAlAs/InP hetero-structure with the release of 1.55 m radiations can often be preferred for optical broadcast due to eye pro-tection issues. Though, a lot of study has been carried out on such material system, but still some more study is needed in context of some parametric relations. For example, gain vs compressive strain, optical wave-length vs compressive strain, differential gain vs carier density are the relations of interest.  In the next sections of this article, a collective study of the optical gain characteristics in terms of wave-length taking into account the internal strain (com-pressive nature) that may occur due to lattice misalli-ance, the peak gain along with the optimized wave-length due to the compressive strains have been car-ried out. Furthermore, the refractive index profile as well as differential gain for different values of the com-pressive strain has also been analysed.  2. STRUCTURAL AND THEORITICAL DETAIL  The quaternary compound material i.e. InGaAlAs with the compositions of In0.71Ga0.21Al0.08As having graded refractive index with the straddling nature has been utilized as an active region to design the  hetero-structure. The composition of the material is selected in such a way so that desired wavelength corresponding to the peak gain could be achieved. The quantum well (thickness ~ 6 nm) of In0.71Ga0.21Al0.08As is sandwiched in between twenty graded refractive index layers (thickness ~ 0.5 nm) of wide band gap material In0.41Ga0.34Al0.25As (as a barrier) followed by cladding (thickness ~ 10 nm) of material In0.52Al0.48As. The whole structure is considered to be grown on InP sub-strate. Here, we have selected InP as a substrate be-cause InP has a wider band gap as compared to the active layer and therefore has the advantage that a zero amount of radiative energy is absorbed inside the substrate region. The optical gain for the studied device can be simu-lated with the following equation [12-14];       2220 0gbgEBr,ij ij ij ci, j Eeffq MG E m C A f f L E E dEE m c n W    The first differentiation of optical gain with respect to carrier density is referred as differential gain. The optical gain in terms of differential gain and carrier concentration is given by below relation:       trG N G N N N     ,   where G(N) stands for differential gain, N and Ntr stand for carrier concentrations and transparency car-rier densities. The relation between differential refrac-tive index and differential gain is given by Anti-Guiding factor. The Anti-Guiding factor is expressed as below equation.         114dn E dG EdN dN                      ,   where  stands for wavelength of light propragation and the quantity dn(E)/dN stands for differential re- PYARE LAL, GARIMA BHARDWAJ, SANDHYA KATTAYAT, P.A. ALVI J. NANO- ELECTRON. PHYS. 12, 02002 (2020)   02002-2 fractive index with carrier concentrations; while the quantity dG(E)/dN stands for differential gain with carrier concentrations.  3. RESULTS AND THEIR PREDICTIONS  In general, the study of optical gain has an essential role in the realization of laser based on the semicon-ducting heterostructures [15, 16]. The optical gain provides a key role in the description of amplification of intensity of light in the semiconductor based materials [17, 18]. Basically, in the semiconducting heterostruc-tures the optical gain occurs due to stimulated emis-sion associated with the emission of light created by electron-hole recombination. In the semiconductors optical gain is caused by photon induced transition of electrons from the conduction band to valence sub bands. If the rate of down ward transitions surpasses the rate of upward transitions, there will be a net gen-eration of photons and optical gain can be attained.  0.4 0.6 0.8 1.0 1.2 1.4 1.6-4000-2000020004000600080004.17%3.17%2.17%1.17%Compressive Strain dependent Optical Gain with Lasing wavelength and Photonic energy for InGaAlAs/InP Straddled HeterostructurePhotonic Energy (eV)Optical Gain (cm-1)Lasing Wavelength (micrometer)0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4   Fig. 1 – Variations in optical gain with lasing wavelength and photonic energies for various percentage strains  In the nano scale heterostructures, the optical gain is measured in per centimetres because it is given by the enhancement in the intensity of light per unit orig-inally intensity and per unit length. The variations of optical gain with lasing wave-length is represented by left (y) and bottom (x) axes and variations of optical gain with photonic energies repre-sented by by left (y) and top (x) axes for various per-centage compressive strain of InGaAlAs/InP straddling type nano scale heterostructure in Fig. 1. It is clearly exhibited by Fig. 1 that the peak optical gains increase with increase in percentage compressive strain and the peaks of spectra are shifted towards lower values of lasing wavelength and higher values of photonic ener-gies. The proportional behaviors of peak optical gain and inversely behaviors of lasing wave length with percentage compressive strain for InGaAlAs/InP strad-dling type nano scale heterostructure are shown by Fig. 2. In other words, Fig. 2 predicts that peak optical gain and peak gain wavelength (lasing wavelength) play inversely behavior to each other. Moreover, for internal strain 4.17 %, the peak optical gain is found ~ 6200/cm at lasing wavelength ~ 1280 nm; for internal strain 3.17 %, the peak optical gain is found ~ 5800/cm at lasing wavelength ~ 1350 nm; for internal strain 2.17 %, the peak optical gain is found ~ 4700/cm at lasing wavelength ~ 1480 nm; and for internal strain 1.17 %, the peak optical gain is found ~ 4200/cm at lasing wavelength ~ 1550 nm. Hence this proposed heterostructure is more utilized in NIR radiation appli-cations as well as optical fiber based communication systems due lowest optical losses [19, 20].   1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.54000450050005500600065007000Maximum Optical Gain and Lasing wavelength with Compressive strain for InGaAlAs/InP Straddled heterostructureCompressive Strain (%)Maximum Optical Gain (cm-1)1.251.301.351.401.451.501.551.601.65Lasing Wavelength (micrometer)  Fig. 2 – Behaviors of peak (maximum) optical gain and lasing wavelength with percentage compressive strain  The index of refraction as well as dielectric constant depends on the charge carrier densities that is elec-trons and holes densities. In the semiconductor hetero-structures devices, fluctuations in the carrier concen-tration affect both the optical differential gain and change in index of refraction. The behaviors of varia-tions in index of refraction with current densities by left (y) and bottom (x) axes and behaviors of variations in differential gain with carrier densities by right (y) and top (x) axes for various percentage compressive strain of InGaAlAs/InP straddling type nano scale heterostructure are shown in Fig. 3. It is predicted by Fig. 3, that the differential gain has reciprocal propor-tional behavior with carrier densities. Next the maxi-mum (peak) differential gain and saturated refractive index change both have proportional behavior with percentage internal strain. It is very necessary to optimize the properties of de-vice performance for accurate prediction of the optical gain and refractive index change in the semiconducting heterostructure. The coupling between optical gain and refractive index change induced by carrier concentra-tion is termed as Anti-guiding factor. In other words the ratio of change in index of refraction per unit carri-er concentration and change in optical gain per unit carrier concentration is called Anti-guiding factor. This type factor has crucial role in the prediction of beam quality of lasing devices and filamentation phenomena. In the heterostructure based lasers the Anti-Guiding factor provides substantial role as a crucial design parameter for high speed modulation. This type factor is a key parameter in the semiconductor lasing devices under continuous wave (CW) operation and high fre- TUNABLE ANTI-GUIDING FACTOR AND OPTICAL GAIN… J. NANO- ELECTRON. PHYS. 12, 02002 (2020)   02002-3 quency (HF) modulation. It can be characterized the line -width broadening due to fluctuation in the carrier concentrations altering the index of refraction. The behaviors of optical gain with current densities and range of Anti-Guiding factor with carrier densities by left (y) and bottom (x) axes and right (y) and top (x) axes respectively for various percentage compressive strain of InGaAlAs/InP straddling type nano scale heterostructure are shown in Fig. 4.  0 500 1000 1500 2000 2500 3000-0.08-0.07-0.06-0.05-0.04-0.03-0.02-0.010.000.01 Compressive Strain dependent Refractive Index Change and Differential Gain for InGaAlAs/InP 4.17%3.17%2.17%1.17%4.17%3.17%2.17%1.17%Carrier Density (x1018/cm3)Differential gain (x10-15cm2)Refractive Index ChangeCurrent Density (A/cm2)-2 0 2 4 6 80369121518    Fig. 3 – Behaviors of change in index of refraction with cur-rent densities and variations in differential gain with carrier densities for various percentage strain (compressive)  0 500 1000 1500 2000 2500 3000-200204060804.17% 3.17%2.17%1.17%4.17%3.17%2.17%1.17%Compressive Strain dependent Optical Gain and Anti-guiding Factor for InGaAlAs/InP Anti-Guiding FactorCarrier Density (x1018/cm3)Optical Gain (x102/cm)Current Density (A/cm2)-2 0 2 4 6 812345678   Fig. 4 – Variations in optical gain with current densities and variations in Anti-Guiding factor with carrier densities for various percentage strain (compressive)  AKNOWLEDGEMENTS  Authors are indebted to Banasthali Vidyapith for supporting the research facilities under CURIE project sanctioned by the DST, Government of India, New-Delhi.     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Tunable Anti-Guiding Factor and Optical Gain of InGaAlAs/InP Nano-Heterostructure under Internal Strain

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