Blaabjerg, Frede

Iannuzzo, Francesco

Luo, Haoze

Reigosa, Paula Diaz

English

Diaz Reigosa, Paula

IRIS Unicas (Università degli Studi di Cassino e del Lazio Meridionale)

Investigation on the short circuit safe operation area of SiC MOSFET power modules

This paper gives a better insight of the short circuit capability of state-of-the-art SiC MOSFET power modules rated at 1.2 kV by highlighting the physical limits under different operating conditions. Two different failure mechanisms have been identiﬁed, both reducing the short-circuit capability of SiC power modules in respect to discrete SiC devices. Based on such failure mechanisms, two short circuit criteria (i.e., short circuit current-based criterion and gate voltage-based criterion) are proposed in order to ensure their robustness under short-circuit conditions. A Safe Operation Area (SOA) of the studied SiC MOSFET power modules is formulated based on the two proposed criteria

Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

Paula Diaz Reigosa

Haoze Luo

Francesco Iannuzzo

Frede Blaabjerg

Crossref

https://vbn.aau.dk/ws/files/269585021/2016_Reigosa_ECCE.pdf

Investigation on the Short Circuit Safe Operation Area of SiC MOSFET Power Modules

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IRIS Unicas (Università degli Studi di Cassino e del Lazio Meridionale)

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